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染指流年笑看世间事

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各国对于分级的标准都不太一样，一些带有色情、血腥、暴力元素的游戏，在美国一般是【M级】，但在日本则会被细分为【D级】和更高的【Z级】。事实上，美国的分级体系ESRB中，还有更高的【AO】级，限定18岁以上，基本和日本的【Z级】一样。但由于主机平台御三家：微软、索尼、任天堂，如今都不允许【AO级】游戏发售，因此我们主机玩家基本不会见到这个级别的游戏（以前早期还是有一些的）。而欧洲的情况还会更复杂，例如涉及到德国战争历史的游戏，会受到更为严格的审查和分级。

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穿透灵魂的`强音

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网络晶体管; 金属氧化物半导体晶体管; 金氧半电晶体; mos晶体管双语例句The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method. 通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor 双极值衬底电流对高压MOS器件退化的影响In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor. 实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。Design of multi-valued double-edge-triggered D flip-flop based on clock-controlled neuron MOS transistor 基于钟控神经MOS管的多值双边沿D触发器设计时标触发器定时触发器The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor. 以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；This article adopts the CMOS current feedback operational amplifier to be realized the high-order all-pole filter, and accomplishes the computer simulation of MOS transistor level towards the concrete circuit, which indicates that the circuit scheme put forward is feasible and the function is fine at last. 采用CMOS电流反馈运算放大器实现高阶全极点滤波器，面向具体电路完成了MOS管级的计算机仿真，结果表明所提出的电路方案可行、性能优良。The neuron MOS transistor is a recently invented device with high functionality. 神经MOS晶体管是最近几年才发明出来的一种高功能度的器件。In the system, the operating point of the circuit and the small signal parameters of MOS transistor are calculated more accurately, and the circuit performance equations are generated from its topology automatically in order to improve the equation-based method. 通过较准确地计算电路的直流工作点和MOS管的小信号参数，以及由电路拓扑结构自动生成电路性能公式对已有的基于公式的方法进行了改进；In this paper, we present a lumped, large-signal, dynamic model of the MOSFET for RF circuit simulation that is derived from a partial differential equation model of the MOS transistor. 针对RF电路模拟的需要，在文中提出了一个基于表面势的MOSFET大信号动态集总模型。这个模型是由MOSFET的PDE模型简化推导而来。The neuron MOS transistor was invented in 1991.It is a high functional floating gate MOS transistor with multiple input control gates. 神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。Design of A/ D and D/ A Converters Using Neuron MOS Transistor 神经MOS晶体管在A/D和D/A转换器中的应用Design of Low Voltage Four quadrant Analogue Multiplier Using Neuron MOS Transistor 采用神经MOS晶体管的低压四象限模拟乘法器的设计This paper presents a new high-voltage high-speed Q-regulated switching power and describes the design of the mixed main circuit of MOS transistor and electron tube, and also some support circuit such as the interface circuit, MOS drive circuit, overflowing protect circuit and high-voltage stabilizing circuit. 介绍一种高压快速调Q开关电源，设计了以功率MOS管驱动高压电子管为主电路的快速开关，并设计了电源的接口电路、MOS管驱动电路、过流保护电路及高压源稳压电路。The multiple-valued logic and neuron-MOS transistor do. 多值逻辑理论和神经MOS晶体管是解决这些问题的有效方法。With the utilization of the voltage controlled resistor characteristics of MOS transistor and the introduction of a feedback circuit controlled by input and output voltages, a dynamic and optimal slope compensation circuit is realized. 该设计引入了输入、输出电压反馈控制电路，利用工作于线性区的MOS管压控电阻特性，实现了动态、优化的斜坡补偿。The bias circuit using a MOS transistor which always operate in linear region to bias the two transistors of the cascode stage operating at the edge of saturation to improve the output voltage swing and subsequently low down the supply voltage. 该偏置电路原理是利用一个始终工作在线性区的MOS管来使共源共栅电流镜的两个级联管均工作在饱和区边缘提高输出电压摆幅，从而降低电源电压。This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。In order to further simplify the configuration of CMOS circuits, the technique of switch sharing, which can realize sharing MOS transistor or MOS net among circuits is investigated. 研究了CMOS电路在开关级设计中的开关共享技术，以使实现多函数的电路之间通过共享MOS开关管或开关网络达到电路的进一步简化。This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation. 分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。Then a novel multi-valued flip-flop is designed based on the improved clock-controlled neuron MOS transistor. 然后采用此改进的钟控神经MOS管设计了一种新型多值触发器。And analyses experimental results of amplitude stability of laser pulse by electro-pulse generator made from cold-cathode tube, avalanche transistor and MOS transistor respectively. 分析由冷阴极管、雪崩管和MOS管制成的电脉冲发生器对输出激光脉冲幅度稳定性的实验结果。Improvement of clock-controlled neuron MOS transistor and its application in multi-valued circuits 钟控神经MOS管的改进及其在多值电路中的应用The application scope of non-fully depletion SOI/ MOS transistor is restricted due to Kink effect. 非全耗尽SOI/MOS晶体管由于存在Kink效应而限制了它的应用范围。The Resistance Coupling Neuron MOS Transistor and It's Difference Four-quadrant Analogue Multiplier 电阻耦合型神经MOS晶体管及其差分四象限模拟乘法器Study on Mechanism of Pd-Ir alloy Gate MOS Transistor Sensitive to Ammonia Pd-Ir合金栅MOS晶体管氨气敏感机理的研究Use of high-voltage isolated power supply and isolation drive technology, we designed a series MOS transistor switch drive. 利用高压隔离电源和隔离驱动技术，设计了上述串联MOS管开关的驱动器。The single-terminal of the Gm-LNA just contains one MOS transistor, two capacitors and two inductors. 单端跨导低噪声放大器包含一个MOS管、两个电容、两个电感。Secondly the MOS transistor circuit model is analyzed in details. In the time the MOS current mirrors and the current conveyor circuit is systematic studied, and simulated the current conveyor circuits. 然后详细分析了MOS晶体管电路模型，系统研究了MOS电流镜和电流传输器电路，并对该电路进行了仿真。After 1984, some scholars started to research on high-temperature MOS transistor and CMOS IC systematically. 1984年后，开始有一些学者对高温MOS晶体管和CMOS集成电路进行了系统研究。And the common amplifier is adopted in powerstage, and thick MOS transistor that improves the output power in a higher operation voltage is used in this common amplifier. 功率级采用共源放大器，使用了厚栅器件，这样可以通过该器件高的工作电压而得到较大的输出功率。

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若即若离

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网络通道金氧半导体双语例句We introduce a four-channel 0.6 μ m CMOS programmable weighting analog switch integrated circuit. Two high transconductance N-Channel MOSFETs are used for switching and weighting functions. 报道了0.6μMCMOS4路可编程加权高频模拟开关集成电路，其开关和加权功能分别由两个高跨导的N沟MOS晶体管实现。The Taurus Workbench optimization of the integration n-channel MOS core technic parameter 集成化nMOS核心工艺参数的TaurusWorkbench优化N-Channel MOS memories-new possibilities for microprocessor memory design MCM7001型N-沟道MOS随机存储器&为微型信息处理机存储器设计提供新的可能性Dual-gate FET Mixers at X-band The Development of the N-channel Silicon Gate MOS Devices X波段双栅场效应晶体管混频器硅栅N沟道MOS场效应晶体管的研制Optimization of Key Process Parameters for Submicron n-Channel MOS Transistors Based on Taurus Workbench 基于TaurusWorkbench的亚微米n沟MOS器件关键工艺参数的优化This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。The Development of the N-channel Silicon Gate MOS Devices Channelling investigation of As implanted Si crystals 硅栅N沟道MOS场效应晶体管的研制砷注入硅背散射沟道研究In this dissertation, the effect of excited states on ionization of dopants, inversion-layer charge density of n-channel MOSFET and MOS capacitor is investigated. 本文集中研究了激发态对杂质电离、n-MOSFET反型层电荷和MOS电容的影响。

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空巢老人家

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网络MOS科技公司; 莫斯技术双语例句C-HMOS technology borrows many of the design and performance characteristics of high-performance MOS ( HMOS). HMOS技术援引了搞性能MOS（HMOS）中的许多设计和性能特征。The characteristic of multi-input is convenient to the design of the filter. The structure is simple and compatible to MOS technology. 其多输入特性更便于滤波器结构的设计，故所设计的滤波器结构简单、对称性好，且与MOS工艺兼容。Based on MEMS technology, after heat oxidation, diffusion, doping, sputtering, light etching, cleaning out and other techniques performed on a silicon plane step by step, an ammonia-sensitive sensor has been made. 利用MEMS技术，在硅平面上经过热氧化、掺杂、溅射、光刻、清洗等工艺，制成MOS结构的氨敏传感器，并将双加热器和测温器集成于一体。The filter needs only OTAs and grounded capacitors and is convenient for being realized by MOS technology. 这种滤波器只需要OTA器件和接地电容，适合于MOS技术集成。SPIC ( Smart Power Integrated Circuit) based on new power MOS device develop rapidly along with the advancement of Micro-electronics technology. 随着微电子技术的进步，以新型功率MOS器件为基础的智能功率集成电路（SPIC）得到了迅速发展。In CMOS technology, the MOSFET located in a well can become a bulk device and ope-rate in the lateral bipolar mode when suitable bias is applied. 在CMOS工艺结构中，将位于阱中的MOS器件加适当的偏置，可以使其变为体内器件、以横向双极管的模式工作。OTA-C active filters may become the most potential because they have good high frequency characteristic and electrically controlled ability, greatly strengthened circuit synthesis ability and compatibility with MOS VLSI technology. 它具有良好的高频特性和电控能力、极强的电路综合能力、与MOSVLSI工艺兼容等优点成为众多的滤波器中最具发展潜力的一种滤波器。CEXTOR: A Circuit Extractor for MOS IC Technology Circuit Classical CEXTOR&一个适合MOS集成电路工艺的电路提取程序On the base of analysis design principle, we proposed a low dropout regulator using BiCMOS technology which benefits from the speed of bipolar devices and the low power consumption of MOS devices. 本文在分析LDO设计原理的基础知识上，提出了一种采用BiCMOS结构的低压差线性稳压器，它充分利用了双极型器件速度快和MOS器件功耗低的特性。A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide As离子注入硅化钛自对准MOS器件技术研究Five-Transistor Memory Cells in ESFI MOS Technology 绝缘体上外延硅薄膜MOS工艺的五管存储单元The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications. 本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。Study on HVMOS Device Technology Compatible with Conventional CMOS Process 与常规CMOS工艺相兼容的高压MOS器件工艺研究Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors ( ISFET) based on MOS technology. 近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。Highly Effective Half-Wave Rectifying Circuits Based on MOS Technology 一种高效MOS半波整流电路Full Ion Implanted MOS Technology Using Infrared Transient Annealing 红外瞬态退火全离子注入MOS工艺的研究This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation. 分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。Microelectronic technology's kernel is IC. MOS memories, which are typical IC products, also develop very rapidly. 微电子技术的核心是集成电路，MOS存储器作为集成电路的典型代表产品，发展异常迅猛。It can be expected that the acts of fluorine on the interface of Si/ SiO2 and in the SiO2 film are responsible to the radiation effects of MOS structures and depend on the technology of F implantation. 可以预测，F在Si/SiO2界面附近和SiO2中的行为直接与MOS结构的辐射响应相对应，而F的行为依赖于注F工艺条件。With the analysing and experimenting of PIN structure and MOS circuit compatible technology. the testing results show that PIN structure is beneficial to improving SSPA performances and is a new sturcture for studying high performance SSPA. 经过PIN结构和MOS电路兼容工艺方案的分析及实验，测试结果表明PIN结构有利于改进SSPA的性能，是研究高性能SSPA的新结构。Humid resistant properties and abrasion durability of MoS 2 based composite coatings deposited with unbalanced nano compound plasma plating technology were analyzed by tribological tests and XPS. 利用摩擦学试验及XPS测试考察了非平衡纳米复合等离子体镀膜技术沉积的MoS2基纳米复合薄膜的抗潮湿性和耐磨寿命等。A Study on the Engineering Techniques for MOS Technology MOS工艺工程技术研究By using the methods of MOS and Kalman filter, two forecasting models for Hefei ′ s air pollution are established. The models provide the necessary supporting technology to make the forecast of air pollution at Hefei City. 通过对空气污染预报方法的研究，采用MOS预报方法、卡尔曼滤波方法分别建立适合于合肥市空气污染特点的预报模式，为开展空气污染预报提供了必要的技术基础。The improved half wave rectifier is presented by employing MOS technology based on the deficiency of conventional architecture. 针对传统半波整流电路的不足提出了基于MOS工艺的改进方法及电路。Use of high-voltage isolated power supply and isolation drive technology, we designed a series MOS transistor switch drive. 利用高压隔离电源和隔离驱动技术，设计了上述串联MOS管开关的驱动器。Strained Si technology introduces stress to the channel of MOS devices by using appropriate process or materials. The band structure of Si, the conductivity effective mass and the carriers 'scattering probability can be altered by stress, resulting in the favorable increase of carriers' mobility. 应变硅技术通过采用适当的工艺或材料在MOS器件的沟道中引入应力，改变硅的能带结构、电导有效质量以及载流子的散射概率，提高载流子的迁移率。Charge-coupled device ( CCD) which based on the development of MOS integrated circuit technology is a major breakthrough in semiconductor technology. 电荷耦合器件（CCD）是在MOS集成电路技术基础上发展起来的，是半导体技术的一次重大突破。1N-type substrate diffusion process is the preparation of the common substrate technology, and it is widely used in transistors, MOS tube and other discrete devices in the craft. N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。Power MOS is a novel power electronic switching devices, which is developed on the basis of integrated circuit technology. 功率MOS是在集成电路工艺基础上发展起来的新一代电力电子开关器件。

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