power bi结果如何发布到web?

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桃夭夭

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power bi结果如何发布到web?以下是将 Power BI 报告发布到 Web 的步骤：1. 在 Power BI Desktop 中创建报告，包括数据集、报表、图表和筛选器等。2. 在 Power BI Desktop 中选择“发布”选项卡，然后选择“Web”选项。这将打开一个新窗口，您需要登录到 Power BI 门户以发布报告。3. 在登录后，您需要选择要发布报告的工作区或文件夹。如果您没有工作区，则可以创建一个。4. 输入报告的名称及其描述，然后单击“发布”按钮。报告和所有相关的数据和图表将上传到 Power BI 门户并发布到 Web。5. 在门户中，您可以选择报告，然后单击“共享”按钮以获取报告的 URL。您可以将此 URL 发送给用户或嵌入到网站中，以便他们可以查看报告。6. 您还可以将报告嵌入到网站中。要这样做，请选择报告，然后单击“嵌入”按钮。您将看到一个 HTML 代码，您可以将其复制并粘贴到您的网站中。报告将在您的网站上嵌入并显示。以上是将 Power BI 报告发布到 Web 的步骤。根据您的需求，您可以选择使用上述步骤中的某些或所有步骤。

49 评论 1小时前发布

思念白云

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MOS array【计】金属氧化物半导体阵列， MOS阵列双语例句Complementary symmetry MOS array 互补对称金属氧化物半导体阵列A novel configuration of a MOS varactor is designed for good linearity of Kvco, as well as a new digital capacitor controlled array topology with lower parasitic capacitance and lower Ron. 通过改变MOS变容管的接入方法实现了更好的压控增益线性度，并采用了新的低寄生电容、低导通电阻的数控电容阵列结构来补偿工艺变化带来的频率变化。Researches on Nonuniformity Correction Technologies for Resistor Array MOS电阻阵列非均匀性校正技术研究Study on MOS Hall Sensor Array MOS霍尔传感器阵列In the present study, we use a clustering algorithm based on the latent variable modeling, which is proposed by the author, to recognize the patterns in two metal oxide semiconductor ( MOS) gas sensor array data set. 该文提出了基于隐变量模型的聚类算法对两组金属氧化物半导体（MOS）传感器阵列数据进行模式识别。A low power ferrite driver for phased array radars is presented in the paper, along with the design of power MOS transistors. 介绍了一种用于相控阵雷达的低功耗铁氧体驱动器和功率MOS管的电路设计，工作在9V时，其功耗小于18mW。Realizing of Real-time IR Image Generate and Display System was focused on based on MOS-Resistor Array Projector. 对基于MOS电阻阵列红外图像转换器的红外图像实时生成和显示系统的实现进行了重点论述。A new type of electronic nose ( eNose) is reported which is a efficient system composed of common MOS gas sensor array for detecting specific gases. 报导了自行研制的微型电子鼻系统，它是以普通金属氧化物气敏传感器阵列组成的探测特定气体的高效系统。Nonuniformity Characterization and Correction of MOS Resistor Array MOS电阻阵的非均匀性测量及补偿方法研究A new technique that use computer and MOS thermal resistance array to generate infrared image has became a trend of infrared image simulator. In the simulator, using computer to simulate dynamic IR images is one of the important techniques. 利用计算机&MOS热电阻阵模拟产生红外场景的新技术成为当前及未来红外场景仿真器的发展趋势，其中的关键技术之一是由计算机实时模拟生成逼真的动态红外图像。The merged images simulate the scene's Infrared image at the entrance of real seeker. With a set of hardwares, the merged images are output to drive the MOS thermal resistance array to generate target/ background IR image. 通过一组硬件设备，输出合成后的红外图像以驱动MOS热电阻阵模拟产生真实场景的红外辐射。And a specific MOS sensor array is selected according to the volatiles of food spoilage. 研究了不同食品在变质过程中的标志性气体，并有针对性地选择了MOS传感器阵列。The sensor array comprises four MOS gas sensors. The gas category is identified by multi-classifier SVM ( MC-SVM) and gas concentration is measured via least square support vector regression ( LS-SVR). 将4个MOS气体传感器组成传感器阵列，利用支持向量多分类机（MC-SVM）进行混合气体识别，应用最小二乘支持向量回归（LS-SVR）进行浓度测量。

42 评论 1小时前发布

我怀念的

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MOS substrate【计】MOS衬底双语例句Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor 双极值衬底电流对高压MOS器件退化的影响Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate 非均匀掺杂衬底MOS结构少子产生寿命的测量Secondly, according to the experimental data, the thesis emphatically and quantitatively studies the influence of substrate doping concentration, substrate bias and channel implant conditions on threshold voltage, and then do the optimization for threshold voltage, after summarizing the structure characteristics of sub-micron MOS devices. 其次，在总结亚微米MOS器件工艺与结构特征的基础上，重点通过实验分析，量化研究了衬底掺杂浓度、衬底偏压和沟道注入条件对阈值电压的影响，并对阈值电压进行了优化设计；The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage. 模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。The simulation results show that, in the 18V and 30V MOSFET, the breakdown point lies around the junction between the Drain and the Substrate, which is under the gate and close to surface. 模拟结果说明了对于耐压为18~30V的MOS器件，其击穿点位于栅下靠近表面的漏衬结处。The effects of above conditions, high k dielectric/ Si system and the selection of SOI as the substrate materials on the total dose radiation effects were reviewed. 综述了上述条件、高k介质/硅系统以及选择SOI材料作为衬底材料对MOS器件总剂量辐射效应的影响。Tribological Behavior of MoS 2 Nanoparticle LB Films on Different Metal Substrate 不同金属基体上MoS2纳米微粒LB膜摩擦学行为研究A new MOS gate controlled power device& MBSIT is described. Its fabrication process is similar to that of a n-channel power MOSFET and employs an n-epitaxial layer grown on an n+ substrate. 介绍了一种新型MOS控制功率器件&MBSIT，它的制造工艺类似于一个功率MOS的制造工艺，其材料是在n＋衬底上生长n－外延层。The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices. 器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。The oxide traps and Si-SiO_2 interracial states introduced in MOS samples with n ( 100) silicon substrate by VUV irradiation ( Helium discharge source) are studied. 以氦灯真空紫外光源研究了辐照下n（100）硅衬底MOS样品的氧化层陷阱和Si-SiO2界面态。Correlation between the Damages of MOS Capacitor Induced by Substrate Hot-carrier Ejection and Total Dose Irradiation MOS电容的热载流子损伤及其与电离辐射损伤的关系Influence of MOS Structure Substrate Resistivity on the Photoelectric Parameters MOS结构衬底电阻率ρ对光电参数的影响Response of MOS capacitor to substrate hot-carrier ejection MOS电容的衬底热电子注入响应特性The parasitical resistance generated by the connection wires and the substrate and the parasitical capacitance generated by the contact between probe or base with the device cause that the directly measured results usually can not reflect the real information of the device itself. MOS电容测量时，连线和样品衬底上的寄生电阻、探针或探针台与样品接触造成的寄生电容等因素，导致直接测量的结果往往不能反映样品本身的真实信息。1N-type substrate diffusion process is the preparation of the common substrate technology, and it is widely used in transistors, MOS tube and other discrete devices in the craft. N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。

0 评论 1小时前发布

无话不谈

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2013版Excel能用power bi吗?能啊，power bi desktop，有数据源就可以。

60 评论 1小时前发布

似梵音

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MOS technology网络MOS科技公司; 莫斯技术双语例句C-HMOS technology borrows many of the design and performance characteristics of high-performance MOS ( HMOS). HMOS技术援引了搞性能MOS（HMOS）中的许多设计和性能特征。The characteristic of multi-input is convenient to the design of the filter. The structure is simple and compatible to MOS technology. 其多输入特性更便于滤波器结构的设计，故所设计的滤波器结构简单、对称性好，且与MOS工艺兼容。Based on MEMS technology, after heat oxidation, diffusion, doping, sputtering, light etching, cleaning out and other techniques performed on a silicon plane step by step, an ammonia-sensitive sensor has been made. 利用MEMS技术，在硅平面上经过热氧化、掺杂、溅射、光刻、清洗等工艺，制成MOS结构的氨敏传感器，并将双加热器和测温器集成于一体。The filter needs only OTAs and grounded capacitors and is convenient for being realized by MOS technology. 这种滤波器只需要OTA器件和接地电容，适合于MOS技术集成。SPIC ( Smart Power Integrated Circuit) based on new power MOS device develop rapidly along with the advancement of Micro-electronics technology. 随着微电子技术的进步，以新型功率MOS器件为基础的智能功率集成电路（SPIC）得到了迅速发展。In CMOS technology, the MOSFET located in a well can become a bulk device and ope-rate in the lateral bipolar mode when suitable bias is applied. 在CMOS工艺结构中，将位于阱中的MOS器件加适当的偏置，可以使其变为体内器件、以横向双极管的模式工作。OTA-C active filters may become the most potential because they have good high frequency characteristic and electrically controlled ability, greatly strengthened circuit synthesis ability and compatibility with MOS VLSI technology. 它具有良好的高频特性和电控能力、极强的电路综合能力、与MOSVLSI工艺兼容等优点成为众多的滤波器中最具发展潜力的一种滤波器。CEXTOR: A Circuit Extractor for MOS IC Technology Circuit Classical CEXTOR&一个适合MOS集成电路工艺的电路提取程序On the base of analysis design principle, we proposed a low dropout regulator using BiCMOS technology which benefits from the speed of bipolar devices and the low power consumption of MOS devices. 本文在分析LDO设计原理的基础知识上，提出了一种采用BiCMOS结构的低压差线性稳压器，它充分利用了双极型器件速度快和MOS器件功耗低的特性。A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide As离子注入硅化钛自对准MOS器件技术研究Five-Transistor Memory Cells in ESFI MOS Technology 绝缘体上外延硅薄膜MOS工艺的五管存储单元The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications. 本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。Study on HVMOS Device Technology Compatible with Conventional CMOS Process 与常规CMOS工艺相兼容的高压MOS器件工艺研究Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors ( ISFET) based on MOS technology. 近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。Highly Effective Half-Wave Rectifying Circuits Based on MOS Technology 一种高效MOS半波整流电路Full Ion Implanted MOS Technology Using Infrared Transient Annealing 红外瞬态退火全离子注入MOS工艺的研究This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation. 分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。Microelectronic technology's kernel is IC. MOS memories, which are typical IC products, also develop very rapidly. 微电子技术的核心是集成电路，MOS存储器作为集成电路的典型代表产品，发展异常迅猛。It can be expected that the acts of fluorine on the interface of Si/ SiO2 and in the SiO2 film are responsible to the radiation effects of MOS structures and depend on the technology of F implantation. 可以预测，F在Si/SiO2界面附近和SiO2中的行为直接与MOS结构的辐射响应相对应，而F的行为依赖于注F工艺条件。With the analysing and experimenting of PIN structure and MOS circuit compatible technology. the testing results show that PIN structure is beneficial to improving SSPA performances and is a new sturcture for studying high performance SSPA. 经过PIN结构和MOS电路兼容工艺方案的分析及实验，测试结果表明PIN结构有利于改进SSPA的性能，是研究高性能SSPA的新结构。Humid resistant properties and abrasion durability of MoS 2 based composite coatings deposited with unbalanced nano compound plasma plating technology were analyzed by tribological tests and XPS. 利用摩擦学试验及XPS测试考察了非平衡纳米复合等离子体镀膜技术沉积的MoS2基纳米复合薄膜的抗潮湿性和耐磨寿命等。A Study on the Engineering Techniques for MOS Technology MOS工艺工程技术研究By using the methods of MOS and Kalman filter, two forecasting models for Hefei ′ s air pollution are established. The models provide the necessary supporting technology to make the forecast of air pollution at Hefei City. 通过对空气污染预报方法的研究，采用MOS预报方法、卡尔曼滤波方法分别建立适合于合肥市空气污染特点的预报模式，为开展空气污染预报提供了必要的技术基础。The improved half wave rectifier is presented by employing MOS technology based on the deficiency of conventional architecture. 针对传统半波整流电路的不足提出了基于MOS工艺的改进方法及电路。Use of high-voltage isolated power supply and isolation drive technology, we designed a series MOS transistor switch drive. 利用高压隔离电源和隔离驱动技术，设计了上述串联MOS管开关的驱动器。Strained Si technology introduces stress to the channel of MOS devices by using appropriate process or materials. The band structure of Si, the conductivity effective mass and the carriers 'scattering probability can be altered by stress, resulting in the favorable increase of carriers' mobility. 应变硅技术通过采用适当的工艺或材料在MOS器件的沟道中引入应力，改变硅的能带结构、电导有效质量以及载流子的散射概率，提高载流子的迁移率。Charge-coupled device ( CCD) which based on the development of MOS integrated circuit technology is a major breakthrough in semiconductor technology. 电荷耦合器件（CCD）是在MOS集成电路技术基础上发展起来的，是半导体技术的一次重大突破。1N-type substrate diffusion process is the preparation of the common substrate technology, and it is widely used in transistors, MOS tube and other discrete devices in the craft. N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。Power MOS is a novel power electronic switching devices, which is developed on the basis of integrated circuit technology. 功率MOS是在集成电路工艺基础上发展起来的新一代电力电子开关器件。

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power bi结果如何发布到web?

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